Optical Device Structure Using GaN Substrates and Growth Structures for Laser Applications

ABSTRACT

Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of U.S. application Ser. No.12/884,993 filed on Sep. 17, 2010 (Attorney Docket No.92011-792471(001320US)), which claims priority from U.S. ProvisionalApplication No. 61/249,568 filed on Oct. 7, 2009 and from U.S.Provisional Application No. 61/243,502 filed on Sep. 17, 2009; and thisapplication is a continuation-in-part of U.S. application Ser. No.12/778,718 filed on May 12, 2010 (Attorney Docket No. 92011-787039(000810US)), which claims priority from U.S. Provisional Application No.61/177,317 filed on May 12, 2009; and this application is acontinuation-in-part of U.S. application Ser. No. 12/762,269 filed onApr. 16, 2010 (Attorney Docket No. 92011-785875 (000610US)), whichclaims priority from U.S. Provisional Application No. 61/243,502 filedon Sep. 17, 2009, from U.S. Provisional Application No. 61/177,218 filedon May 11, 2009, from U.S. Provisional Application No. 61/170,550 filedon Apr. 17, 2009, and from U.S. Provisional Application No. 61/170,553filed on Apr. 17, 2009; and this application is a continuation-in-partof U.S. application Ser. No. 12/762,271 filed on Apr. 16, 2010 (AttorneyDocket No. 92011-785876 (000710US)), which claims priority from U.S.Provisional Application No. 61/243,502 filed on Sep. 17, 2009, from U.S.Provisional Application No. 61/177,227 filed on May 11, 2009, from U.S.Provisional Application No. 61/170,550 filed on Apr. 17, 2009, and fromU.S. Provisional Application No. 61/170,553 filed on Apr. 17, 2009; andthis application is a continuation-in-part of U.S. application Ser. No.12/759,273 filed on Apr. 13, 2010 (Attorney Docket No. 92011-785874(000210US)), which claims priority from U.S. Provisional Application No.61/243,502 filed on Sep. 17, 2009, and from U.S. Provisional ApplicationNo. 61/168,926 filed on Apr. 13, 2009; each of which iscommonly-assigned and each of which are hereby incorporated by referencein its entirety.

BACKGROUND OF THE INVENTION

This invention is directed to optical devices and related methods. Moreparticularly, the invention provides a method of manufacture and adevice for emitting electromagnetic radiation using semipolar ornon-polar gallium containing substrates such as GaN, MN, InN, InGaN,AlGaN, and AlInGaN, and others. Merely by way of example, the inventioncan be applied to optical devices, lasers, light emitting diodes, solarcells, photoelectrochemical water splitting and hydrogen generation,photodetectors, integrated circuits, and transistors, among otherdevices.

In the late 1800's, Thomas Edison invented the light bulb. Theconventional light bulb, commonly called the “Edison bulb,” has beenused for over one hundred years for a variety of applications includinglighting and displays. The conventional light bulb uses a tungstenfilament enclosed in a glass bulb sealed in a base, which is screwedinto a socket. The socket is coupled to an AC or DC power source. Theconventional light bulb can be found commonly in houses, buildings, andoutdoor lightings, and other areas requiring light or displays.

Unfortunately, drawbacks exist with the conventional Edison light bulb.First, the conventional light bulb dissipates much thermal energy. Morethan 90% of the energy used for the conventional light bulb dissipatesas thermal energy. Second, reliability is less than desired—theconventional light bulb routinely fails due to thermal expansion andcontraction of the filament element. In addition, conventional lightbulbs emit light over a broad spectrum, much of which does not result inillumination at wavelengths of spectral sensitivity to the human eye.Finally, conventional light bulbs emit light in all directions. Theytherefore are not ideal for applications requiring strong directionalityor focus, such as projection displays, optical data storage, orspecialized directed lighting.

In 1960, the laser was first demonstrated by Theodore H. Maiman atHughes Research Laboratories in Malibu. This laser utilized asolid-state flashlamp-pumped synthetic ruby crystal to produce red laserlight at 694 nm. By 1964, blue and green laser output was demonstratedby William Bridges at Hughes Aircraft utilizing a gas Argon ion laser.The Ar-ion laser utilized a noble gas as the active medium and producedlaser light output in the UV, blue, and green wavelengths including 351nm, 454.6 nm, 457.9 nm, 465.8 nm, 476.5 nm, 488.0 nm, 496.5 nm, 501.7nm, 514.5 nm, and 528.7 nm. The Ar-ion laser had the benefit ofproducing highly directional and focusable light with a narrow spectraloutput, but the wall plug efficiency was less than 0.1%. The size,weight, and cost of the laser was undesirable as well.

As laser technology evolved, more efficient lamp pumped solid statelaser designs were developed for the red and infrared wavelengths, butthese technologies remained a challenge for blue and green lasers. As aresult, lamp pumped solid state lasers were developed in the infrared,and the output wavelength was converted to the visible using specialtycrystals with nonlinear optical properties. A green lamp pumped solidstate laser had 3 stages: electricity powers lamp, lamp excites gaincrystal which lases at 1064 nm, 1064 nm goes into frequency conversioncrystal which converts to visible 532 nm. The resulting green and bluelasers were called “lamped pumped solid state lasers with secondharmonic generation” (LPSS with SHG). These had wall plug efficiency of˜1%, and were more efficient than Ar-ion gas lasers, but were still tooinefficient, large, expensive, and fragile for broad deployment outsideof specialty scientific and medical applications. Additionally, the gaincrystal used in the solid state lasers typically had energy storageproperties which made the lasers difficult to modulate at high speeds,limiting broader deployment.

To improve the efficiency of these visible lasers, high power diode (orsemiconductor) lasers were utilized. These “diode pumped solid statelasers with SHG” (DPSS with SHG) had 3 stages: electricity powers 808 nmdiode laser, 808 nm excites gain crystal which lases at 1064 nm, 1064 nmgoes into frequency conversion crystal which converts to visible 532 nm.The DPSS laser technology extended the life and improved the wall plugefficiency of the LPSS lasers to 5-10%. This sparked furthercommercialization into specialty industrial, medical, and scientificapplications. The change to diode pumping, however, increased the systemcost and required precise temperature controls, leaving the laser withsubstantial size and power consumption. The result did not address theenergy storage properties which made the lasers difficult to modulate athigh speeds.

As high power laser diodes evolved and new specialty SHG crystals weredeveloped, it became possible to directly convert the output of theinfrared diode laser to produce blue and green laser light output. These“directly doubled diode lasers” or SHG diode lasers had 2 stages:electricity powers 1064 nm semiconductor laser, 1064 nm goes intofrequency conversion crystal which converts to visible 532 nm greenlight. These lasers designs are intended to provide improved efficiency,cost and size compared to DPSS-SHG lasers, but the specialty diodes andcrystals required make this challenging today. Additionally, while thediode-SHG lasers have the benefit of being directly modulated, theysuffer from sensitivity to temperature which limits their application.Further, the spectral linewidth of SHG-based lasers is typically verynarrow at about 0.1 nm, which can lead to a severe image distortioncalled speckle in display applications.

BRIEF SUMMARY OF THE INVENTION

This invention provides a manufacturing method and a device for emittingelectromagnetic radiation using semipolar or non-polar galliumcontaining substrates such as GaN, MN, InN, InGaN, AlGaN, and AlInGaN,and others. Merely by way of example the invention can be applied to thenon-polar m-plane or to the semipolar (11-22), (30-31), (30-3-1),(20-21), (20-2-1), (30-32), or (30-3-2), or offcuts thereof. Merely byway of example, the invention can be applied to optical devices, lasers,light emitting diodes, solar cells, photoelectrochemical water splittingand hydrogen generation, photodetectors, integrated circuits, andtransistors, among other devices. Laser diodes according to thisinvention can offer improved efficiency, cost, temperature sensitivity,and ruggedness over lasers based on SHG technology. Moreover, laserdiodes according to this invention can provide an output with a spectrallinewidth of 0.5 to 2 nm, which is advantageous in display applicationswhere speckle must be considered.

This invention provides an optical device, which includes a galliumnitride substrate having a semipolar or nonpolar crystalline surfaceregion. The device also has an n-type cladding layer overlying thesubstrate surface. In a preferred embodiment, the n-type GaN claddinglayer has a thickness from 100 nm to 5000 nm with a silicon doping levelof 1E17 to 5E18 cm-3. The device has an n-side SCH layer overlying then-type cladding layer. Preferably, the n-side SCH layer is comprised ofInGaN with molar fraction of indium of between 1% and 7% and has athickness from 40 to 150 nm. The optical device also has a multiplequantum well active region overlying the n-side SCH layer. Preferably,the multiple quantum well active region is comprised of two to five2.5-4.5 nm InGaN quantum wells separated by 3.7-5.5 nm or 7.5 to 20 nmgallium and nitrogen containing barriers such as GaN. Preferably theoptical device has a p-side guide layer overlying the multiple quantumwell active region. In a preferred embodiment, the p-side guide layercomprises GaN or InGaN and has a thickness from 20 nm to 100 nm. Theoptical device has an electron blocking layer overlying the p-side guidelayer. Preferably, the electron blocking layer comprises a magnesiumdoped AlGaN layer with molar fraction of aluminum of between 6% and 22%at a thickness from 10 nm to 25 nm. Preferably the optical device alsohas a p-type cladding layer overlying the electronic blocking layer. Thep-type cladding layer has a thickness from 300 nm to 1000 nm with amagnesium doping level of 2E17 cm-3 to 1E19 cm-3 according to one ormore embodiments. The device also has a p++-gallium and nitrogen contactlayer overlying the p-type cladding layer. The P++-gallium and nitrogencontaining layer typically has a thickness from 10 nm to 120 nm with aMg doping level of 1E19 cm-3 to 1E21cm-3.

The present invention enables a cost-effective optical device for laserapplications. In a specific embodiment, the optical device can bemanufactured in a relatively simple and cost effective manner. Dependingupon the embodiment, the present apparatus and method can bemanufactured using conventional materials and/or methods. The laserdevice uses a semipolar or non-polar gallium nitride material capable ofproviding green laser light. In some embodiments, the laser is capableof emitting long wavelengths, for example, those ranging from about 470nm to greater than about 535 nm, as well as others. A furtherunderstanding of the nature and advantages of the present invention maybe appreciated by reference to the following portions of thespecification and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a simplified perspective view of a laser device fabricated ona semipolar substrate according to an embodiment of the presentinvention.

FIG. 1B is a simplified perspective view of a laser device fabricated ona non-polar substrate according to an embodiment of the presentinvention.

FIG. 2 is a detailed cross-sectional view of a laser device fabricatedon a non-polar substrate according to an embodiment of the presentinvention.

FIG. 3 is a simplified diagram illustrating an epitaxial laser structureaccording to a preferred embodiment of the present invention.

FIGS. 4 through 6 are simplified diagrams illustrating a laser devicefor a laser device according to a first embodiment of the presentinvention.

FIGS. 7 through 8 are simplified diagrams illustrating a laser devicefor a laser device according to a second embodiment of the presentinvention.

FIGS. 9 through 10 are simplified diagrams illustrating a laser devicefor a laser device according to a third embodiment of the presentinvention.

FIGS. 11 through 13 are simplified diagrams illustrating a laser devicefor a laser device according to a fourth embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

According to the present invention, techniques related generally tooptical devices are provided. More particularly, the present inventionprovides a method and device for emitting electromagnetic radiationusing semipolar or non-polar gallium containing substrates such as GaN,MN, InN, InGaN, AlGaN, and AlInGaN, and others. Merely by way of examplethe invention can be applied to the non-polar m-plane or to thesemipolar (11-22), (30-31), (30-3-1), (20-21), (20-2-1), (30-32), or(30-3-2), or offcuts thereof. Merely by way of example, the inventioncan be applied to optical devices, lasers, light emitting diodes, solarcells, photoelectrochemical water splitting and hydrogen generation,photodetectors, integrated circuits, and transistors, among otherdevices. In a specific embodiment, the present laser device can beemployed in either a semipolar or non-polar gallium containingsubstrate, as described below. Laser diodes according to this inventioncan offer improved efficiency, cost, temperature sensitivity, andruggedness over lasers based on SHG technology. Moreover, laser diodesaccording to this invention can provide an output with a spectrallinewidth of 0.5 to 2 nm, which is advantageous in display applicationswhere speckle must be considered.

FIG. 1A is a simplified perspective view of a laser device 100fabricated on a semipolar substrate according to an embodiment of thepresent invention. This diagram is merely an example, which should notunduly limit the scope of the claims herein. One of ordinary skill inthe art would recognize other variations, modifications, andalternatives. As shown, the optical device includes a gallium nitridesubstrate member 101 having a semipolar or non-polar crystalline surfaceregion. In a specific embodiment, the gallium nitride substrate memberis a bulk GaN substrate characterized by having a semipolar or non-polarcrystalline surface region, but can be others. In a specific embodiment,the bulk nitride GaN substrate comprises nitrogen and has a surfacedislocation density below 10⁷ cm⁻² or 10⁵ cm⁻². The nitride crystal orwafer may comprise Al_(x)In_(y)Ga_(1-x-y)N, where 0≦x, y, x+y≦1. In onespecific embodiment, the nitride crystal comprises GaN. In one or moreembodiments, the GaN substrate has threading dislocations, at aconcentration between about 10⁵ cm⁻² and about 10⁸ cm⁻², in a directionthat is substantially orthogonal or oblique with respect to the surface.As a consequence of the orthogonal or oblique orientation of thedislocations, the surface dislocation density is below about 10⁷ cm⁻² orbelow about 10⁵ cm⁻². In a specific embodiment, the device can befabricated on a slightly off-cut semipolar substrate as described inU.S. application Ser. No. 12/749,466, which claims priority to U.S.Provisional No. 61/164,409 filed on Mar. 28, 2009, commonly assigned,and hereby incorporated by reference herein.

In a specific embodiment on semipolar GaN, the device has a laser striperegion formed overlying a portion of the semi polar crystallineorientation surface region. In a specific semipolar GaN embodiment, thelaser stripe region is characterized by a cavity orientation issubstantially parallel to the m-direction. In a specific embodiment, thelaser strip region has a first end 107 and a second end 109.

In a specific embodiment on nonpolar GaN, the device has a laser striperegion formed overlying a portion of the semi or non-polar crystallineorientation surface region, as illustrated by FIG. 1B. The laser striperegion is characterized by a cavity orientation which is substantiallyparallel to the c-direction. The laser strip region has a first end anda second end. Typically, the non-polar crystalline orientation isconfigured on an m-plane, which leads to polarization ratios parallel tothe a-direction. In some embodiments, the m-plane is the (10-10) family.Of course, the cavity orientation can also be substantially parallel tothe a-direction as well. In the specific nonpolar GaN embodiment havingthe cavity orientation substantially parallel to the c-direction isfurther described in “Laser Device and Method Using Slightly MiscutNon-Polar GaN Substrates,” in the names of Raring, James W. and Pfister,Nick listed as U.S. application Ser. No. 12/759,273, which claimspriority to U.S. Provisional Ser. No. 61/168,926 filed on Apr. 13, 2009,commonly assigned, and hereby incorporated by reference for allpurposes.

In a preferred semipolar embodiment, the device has a first cleavedsemipolar facet provided on the first end of the laser stripe region anda second cleaved semipolar facet provided on the second end of the laserstripe region. The first cleaved semipolar facet is substantiallyparallel with the second cleaved semipolar facet. In a specificembodiment, the semipolar substrate is configured on a (30-31),(30-3-1), (20-21), (20-2-1), (30-32), (30-3-2) or offcut. The laserwaveguide cavity is aligned in the projection of the c-direction. Mirrorsurfaces are formed on each of the cleaved surfaces. The first cleavedsemipolar facet comprises a first mirror surface, typically provided bya scribing and breaking process. The scribing process can use anysuitable technique, such as a diamond scribe or laser scribe orcombinations. In a specific embodiment, the first mirror surfacecomprises a reflective coating. The reflective coating is selected fromsilicon dioxide, hafnia, and titania, tantalum pentoxide, zirconia,aluminum oxide, including combinations, and the like. Depending upon theembodiment, the first mirror surface can be provided by ananti-reflective coating. Of course, there can be other variations,modifications, and alternatives.

Also in a preferred semipolar embodiment, the second cleaved semipolarfacet comprises a second mirror surface. The second mirror surface canbe provided by a scribing and breaking process. Preferably, the scribingis performed by diamond or laser scribing. In a specific embodiment, thesecond mirror surface comprises a reflective coating, such as silicondioxide, hafnia, and titania, tantalum pentoxide, zirconia, aluminumoxide, combinations, and the like. In a specific embodiment, the secondmirror surface comprises an anti-reflective coating. Of course, therecan be other variations, modifications, and alternatives.

In an alternative preferred semipolar embodiment, the device has a firstcleaved m-face facet provided on the first end of the laser striperegion and a second cleaved m-face facet provided on the second end ofthe laser stripe region. The first cleaved m-facet is substantiallyparallel with the second cleaved m-facet. In a specific embodiment, thesemipolar substrate is configured on (11-22) series of planes, enablingthe formation of m-facets for laser cavities oriented in them-direction. Mirror surfaces are formed on each of the cleaved surfaces.The first cleaved m-facet comprises a first mirror surface, typicallyprovided by a scribing and breaking process. The scribing process canuse any suitable technique, such as a diamond scribe or laser scribe orcombinations. In a specific embodiment, the first mirror surfacecomprises a reflective coating. The reflective coating is selected fromsilicon dioxide, hafnia, and titania, tantalum pentoxide, zirconia,aluminum oxide, including combinations, and the like. Depending upon theembodiment, the first mirror surface can be provided by ananti-reflective coating. Of course, there can be other variations,modifications, and alternatives.

In a preferred nonpolar embodiment, the device has a first cleavedc-face facet provided on the first end of the laser stripe region and asecond cleaved c-face facet provided on the second end of the laserstripe region. In one or more embodiments, the first cleaved c-facet issubstantially parallel with the second cleaved c-facet. In a specificembodiment, the nonpolar substrate is configured on (10-10) series ofplanes, which enables the formation of c-facets for laser cavitiesoriented in the c-direction. Mirror surfaces are formed on each of thecleaved surfaces. The first cleaved c-facet comprises a first mirrorsurface. In a preferred embodiment, the first mirror surface is providedby a scribing and breaking process. The scribing process can use anysuitable techniques, such as a diamond scribe or laser scribe orcombinations. In a specific embodiment, the first mirror surfacecomprises a reflective coating. The reflective coating is selected fromsilicon dioxide, hafnia, and titania, tantalum pentoxide, zirconia,aluminum oxide including combinations, and the like. Depending upon theembodiment, the first mirror surface can also comprise ananti-reflective coating. Of course, there can be other variations,modifications, and alternatives.

Also in a preferred nonpolar embodiment, the second cleaved c-facetcomprises a second mirror surface. The second mirror surface can beprovided by a scribing and breaking process, for example, diamond orlaser scribing or the like. In a specific embodiment, the second mirrorsurface comprises a reflective coating, such as silicon dioxide, hafnia,and titania, tantalum pentoxide, zirconia, aluminum oxide, combinations,and the like. In a specific embodiment, the second mirror surfacecomprises an anti-reflective coating. Of course, there can be othervariations, modifications, and alternatives.

In a specific embodiment, the laser stripe has a length and width. Thelength ranges from about 250 microns to about 3000 microns. The stripalso has a width ranging from about 0.5 microns to about 50 microns, butcan be other dimensions. In a specific embodiment, the width issubstantially constant in dimension, although there may be slightvariations. The width and length are often formed using a masking andetching process, such as commonly used in the art.

In a specific semipolar embodiment, the device is also characterized bya spontaneously emitted light that is polarized in substantiallyparallel to the projection of the c-direction. That is, the deviceperforms as a laser or the like. In a preferred embodiment, thespontaneously emitted light is characterized by a polarization ratio ofgreater than about 0.2 and less than about 1 parallel to the projectionof the c-direction. In a preferred embodiment, the spontaneously emittedlight is characterized by a wavelength ranging from about 500 to about580 nanometers to yield a green laser. The spontaneously emitted lightis highly polarized and is characterized by a polarization ratioparallel to the projection of the c-direction of greater than 0.4. Ofcourse, there can be other variations, modifications, and alternatives.

In a specific nonpolar embodiment, the device is also characterized by aspontaneously emitted light that is polarized parallel to thea-direction. That is, the device performs as a laser or the like. In apreferred embodiment, the spontaneously emitted light is characterizedby a polarization ratio of greater than about 0.1 and less than about 1parallel to the projection of the c-direction. In a preferredembodiment, the spontaneously emitted light characterized by awavelength ranging from about 475 to about 540 nanometers to yield ablue-green or green laser and others and the spontaneously emitted lightis highly polarized and is characterized by a polarization ratioparallel to the a-direction of greater than 0.5. Of course, there can beother variations, modifications, and alternatives.

FIG. 2 is a detailed cross-sectional view of a laser device 200fabricated on a non-polar substrate according to one embodiment of thepresent invention. As shown, the laser device includes gallium nitridesubstrate 203, which has an underlying n-type metal back contact region201. The metal back contact region preferably is made of a suitablematerial such as those noted below.

In a specific embodiment, the device also has an overlying n-typegallium nitride layer 205, an active region 207, and an overlying p-typegallium nitride layer structured as a laser stripe region 209. In aspecific embodiment, each of these regions is formed using an epitaxialdeposition technique of metal organic chemical vapor deposition (MOCVD),molecular beam epitaxy (MBE), or other epitaxial growth techniquessuitable for GaN growth. In a specific embodiment, the epitaxial layeris a high quality epitaxial layer overlying the n-type gallium nitridelayer. In some embodiments the high quality layer is doped, for example,with Si or O to form n-type material, with a dopant concentrationbetween about 10¹⁶ cm⁻³ and 10²⁰ cm⁻³.

In a specific embodiment, an n-type Al_(u)In_(v)Ga_(1-u-v)N layer, where0≦u, v, u+v≦1, is deposited on the substrate. In a specific embodiment,the carrier concentration may lie in the range between about 10¹⁶ cm⁻³and 10²⁰ cm⁻³. The deposition may be performed using metalorganicchemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

As an example, the bulk GaN substrate is placed on a susceptor in anMOCVD reactor. After closing, evacuating, and back-filling the reactor(or using a load lock configuration) to atmospheric pressure, thesusceptor is heated to a temperature between about 800 and about 1100degrees Celsius in the presence of a nitrogen-containing gas. In onespecific embodiment, the susceptor is heated to approximately 1000degrees Celsius under flowing ammonia. A flow of a gallium-containingmetalorganic precursor, such as trimethylgallium (TMG) ortriethylgallium (TEG) is initiated, in a carrier gas, at a total ratebetween approximately 1 and 50 standard cubic centimeters per minute(sccm). The carrier gas may comprise hydrogen, helium, nitrogen, orargon. The ratio of the flow rate of the group V precursor (ammonia) tothat of the group III precursor (trimethylgallium, triethylgallium,trimethylindium, trimethylaluminum) during growth is between about 2000and about 12000. A flow of disilane in a carrier gas, with a total flowrate of between about 0.1 and 10 sccm, is initiated.

In a specific embodiment, the laser stripe region is made of the p-typegallium nitride layer 209. In a specific embodiment, the laser stripe isprovided by an etching process selected from dry etching or wet etching.In a preferred embodiment, the etching process is dry, but otherprocesses can be used. As an example, the dry etching process is aninductively coupled process using chlorine bearing species or a reactiveion etching process using similar chemistries. The chlorine bearingspecies are commonly derived from chlorine gas or the like. The devicealso has an overlying dielectric region, which exposes 213 contactregion. In a specific embodiment, the dielectric region is an oxide suchas silicon dioxide or silicon nitride. The contact region is coupled toan overlying metal layer 215. The overlying metal layer is amultilayered structure containing gold and nickel (Ni/Au), gold andpalladium (Pd/Au), gold and platinum (Pt/Au), but can be others.

In a specific embodiment, the laser device has active region 207. Theactive region can include one to twenty quantum well regions accordingto one or more embodiments. As an example following deposition of then-type Al_(u)In_(v)Ga_(1-u-v)N layer for a predetermined period of time,so as to achieve a predetermined thickness, an active layer isdeposited. The active layer may comprise a single quantum well or amultiple quantum well, with 1-10 quantum wells. The quantum wells maycomprise InGaN wells and GaN barrier layers. In other embodiments, thewell layers and barrier layers comprise Al_(w)In_(x)Ga_(1-w-x)N andAl_(y)In_(z)Ga_(1-y-z)N, respectively, where 0≦w, x, y, z, w+x, y+z≦1,where w<u, y and/or x>v, z so that the bandgap of the well layer(s) isless than that of the barrier layer(s) and the n-type layer. The welllayers and barrier layers may each have a thickness between about 1 nmand about 40 nm. In another embodiment, the active layer comprises adouble heterostructure, with an InGaN or Al_(w)In_(x)Ga_(1-w-x)N layerabout 10 nm to 100 nm thick surrounded by GaN or Al_(y)In_(z)Ga_(1-y-z)Nlayers, where w<u, y and/or x>v, z. The composition and structure of theactive layer are chosen to provide light emission at a preselectedwavelength. The active layer may be left undoped (or unintentionallydoped) or may be doped n-type or p-type.

In a specific embodiment, the active region can also include an electronblocking region, and a separate confinement heterostructure. In someembodiments, an electron blocking layer is preferably deposited. Theelectron-blocking layer may comprise Al_(s)In_(t)Ga_(1-s-t)N, where 0≦s,t, s+t≦1, with a higher bandgap than the active layer, and may be dopedp-type. In one specific embodiment, the electron blocking layercomprises AlGaN. In another embodiment, the electron blocking layercomprises an AlGaN/GaN super-lattice structure, comprising alternatinglayers of AlGaN and GaN, each with a thickness between about 0.2 nm andabout 5 nm.

As noted, the p-type gallium nitride structure, which can be a p-typedoped Al_(q)In_(r)Ga_(1-q-r)N, where 0≦q, r, q+r≦1, layer is depositedabove the active layer. The p-type layer may be doped with Mg, to alevel between about 10¹⁶ cm⁻³ and 10²² cm⁻³, and may have a thicknessbetween about 5 nm and about 1000 nm. The outermost 1-50 nm of thep-type layer may be doped more heavily than the rest of the layer, so asto enable an improved electrical contact. In a specific embodiment, thelaser stripe is provided by a dry etching process, but wet etching mayalso be used. The device also has an overlying dielectric region, whichexposes contact region 213. In a specific embodiment, the dielectricregion is an oxide such as silicon dioxide.

In a specific embodiment, the metal contact is made of suitablematerial. The reflective electrical contact may comprise at least one ofsilver, gold, aluminum, nickel, platinum, rhodium, palladium, chromium,or the like. The electrical contact may be deposited by thermalevaporation, electron beam evaporation, electroplating, sputtering, oranother suitable technique. In a preferred embodiment, the electricalcontact serves as a p-type electrode for the optical device. In anotherembodiment, the electrical contact serves as an n-type electrode for theoptical device. Of course, there can be other variations, modifications,and alternatives. Further details of the cleaved facets appear below.

FIG. 3 is a simplified diagram illustrating a laser structure accordingto a preferred embodiment of the present invention. This diagram ismerely an example, which should not unduly limit the scope of the claimsherein. One of ordinary skill in the art would recognize othervariations, modifications, and alternatives. In a specific embodiment,the device includes a starting material such as a bulk nonpolar orsemipolar GaN substrate, but can be others. In a specific embodiment,the device is configured to achieve emission wavelength ranges of 390 nmto 420 nm, 420 nm to 440 nm, 440 nm to 470 nm, 470 nm to 490 nm, 490 nmto 510 nm, 510 nm to 530 nm, and 530 nm to 550 nm, but can be others.

In a preferred embodiment, the growth structure is configured usingbetween 2 and 4 or 5 and 7 quantum wells positioned between n-type andp-type gallium and nitrogen containing cladding layers such as GaN,AlGaN, or InAlGaN. In a specific embodiment, the n-type cladding layerranges in thickness from 500 nm to 5000 nm and has an n-type dopant suchas Si with a doping level of between 1E18 cm⁻³ and 3E18 cm⁻³. In aspecific embodiment, the p-type cladding layer ranges in thickness from300 nm to 1000 nm and has a p-type dopant such as Mg with a doping levelof between 1E17 cm⁻³ and 5E19 cm⁻³. In a specific embodiment, the Mgdoping level is graded such that the concentration would be lower in theregion closer to the quantum wells.

In a specific preferred embodiment, the quantum wells have a thicknessof between 2.0 nm and 4.0 nm or 4.0 nm and 7.0 nm, but can be others. Ina specific embodiment, the quantum wells would be separated by barrierlayers with thicknesses between 4 nm and 8 nm or 8 nm and 18 nm. Thequantum wells and the barriers together comprise a multiple quantum well(MQW) region.

In a preferred embodiment, the device has barrier layers formed from GaNor InGaN. In a specific embodiment using InGaN, the indium contentsrange from 1% to 5% (molar percent).

An InGaN separate confinement heterostructure layer (SCH) could bepositioned between the n-type cladding and the MQW region according toone or more embodiments. Typically, such separate confinement layer iscommonly called the n-side SCH. The n-side SCH layer ranges in thicknessfrom 10 nm to 50 nm or 50 nm to 150 nm and ranges in indium compositionfrom 1% to 8% (mole percent), but can be others. In a specificembodiment, the n-side SCH layer may or may not be doped with an n-typedopant such as Si.

In yet another preferred embodiment, an InGaN separate confinementheterostructure layer (SCH) is positioned between the p-type claddinglayer and the MQW region, which is called the p-side SCH. In a specificembodiment, the p-side SCH layer ranges in thickness from 10 nm to 50 nmor 50 nm to 100 nm and ranges in indium composition from 1% to 7% (molepercent), but can be others. The p-side SCH layer may or may not bedoped with a p-type dopant such as Mg. In another embodiment, thestructure would contain both an n-side SCH and a p-side SCH.

In a specific preferred embodiment, an AlGaN electron blocking layer,with an aluminum content of between 6% and 22% (mole percent), ispositioned between the MQW and the p-type cladding layer either withinthe p-side SCH or between the p-side SCH and the p-type cladding. TheAlGaN electron blocking layer ranges in thickness from 10 nm to 30 nmand is doped with a p-type dopant such as Mg from 1E18 cm-3 and 1E20cm-3 according to a specific embodiment.

Preferably, a p-contact layer positioned on top of and is formedoverlying the p-type cladding layer. The p-contact layer would becomprised of a gallium and nitrogen containing layer such as GaN dopedwith a p-dopant such as Mg at a level ranging from 1E19 cm⁻³ to 1E22cm⁻³.

Several more detailed embodiments, not intended to limit the scope ofthe claims, are described below.

In a specific embodiment, the present invention provides a laser devicecapable of emitting 474 nm and also 485 nm, or 470 nm to 490 nm, or 510nm to 535 nm wavelength light. The device is provided with one or moreof the following elements, as also referenced in FIGS. 4 through 6:

an n-type cladding layer with a thickness from 1000 nm to 5000 nm withSi doping level of 1E17 cm⁻³ to 3E18 cm⁻³;

an n-side SCH layer comprised of InGaN with molar fraction of indium ofbetween 1.5% and 6% and thickness from 35 to 125 nm;

a multiple quantum well active region layers comprised of three to five2.5-5.0 nm InGaN quantum wells separated by six 4.5-5.5 nm GaN barriers;

a p-side SCH layer comprised of InGaN with molar fraction of indium ofbetween 1.5% and 5% and thickness from 15 nm to 85 nm;

an electron blocking layer comprised of AlGaN with molar fraction ofaluminum of between 6% and 22% and thickness from 10 nm to 15 nm anddoped with Mg;

a p-type cladding layer with a thickness from 300 nm to 1000 nm with Mgdoping level of 5E17 cm⁻³ to 1E19 cm⁻³; and

a p++-GaN contact layer with a thickness from 20 nm to 55 nm with Mgdoping level of 1E20 cm⁻³ to 1E21 cm³.

In a specific embodiment, the above laser device is fabricated on anonpolar oriented surface region. Preferably, the 474 nm configuredlaser device uses a nonpolar (10-10) substrate with a miscut or off cutof −0.3 to 0.3 degrees towards (0001) and −0.3 to 0.3 degrees towards(11-20). In a specific embodiment, the n-GaN/p-GaN is grown using an N₂subflow and N₂ carrier gas.

In yet an alternative specific embodiment, the present inventionprovides a laser device capable of emitting 486 nm wavelength light,among others, in a ridge laser embodiment. The device is provided withone or more of the following elements, as also referenced in FIGS. 8through 9:

an n-GaN cladding layer with a thickness from 100 nm to 5000 nm with Sidoping level of 5E17 cm⁻³ to 3E18 cm⁻³;

an n-side SCH layer comprised of InGaN with molar fraction of indium ofbetween 3% and 5% and thickness from 40 to 60 nm;

a multiple quantum well active region layers comprised of seven 4.5-5.5nm InGaN quantum wells separated by eight 4.5-5.5 nm GaN barriers;

a p-side guide layer comprised of GaN with a thickness from 40 nm to 50nm;

an electron blocking layer comprised of AlGaN with molar fraction ofaluminum of between 15% and 22% and thickness from 10 nm to 15 nm anddoped with Mg;

a p-GaN cladding layer with a thickness from 400 nm to 1000 nm with Mgdoping level of 5E17 cm⁻³ to 1E19 cm⁻³; and

p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mgdoping level of 2E19 cm⁻³ to 1E21 cm⁻³.

In a specific embodiment, the laser device is fabricated on a non-polar(10-10) oriented surface region (m-plane). In a preferred embodiment,the non-polar substrate has a miscut or off cut of −0.8 to −1.2 degreestowards (0001) and −0.3 to 0.3 degrees towards (11-20). In a specificembodiment, the non-polar oriented surface region has an overlyingn-GaN/p-GaN grown with H₂/N₂ subflow and H₂ carrier gas.

In a specific embodiment, the present invention provides an alternativedevice structure capable of emitting 481 nm light, among others, in aridge laser embodiment. The device is provided with one or more of thefollowing elements, as also referenced in FIGS. 9 through 10;

an n-GaN cladding layer with a thickness from 100 nm to 3000 nm with Sidoping level of 5E17 cm⁻³ to 3E18 cm⁻³;

an n-side SCH layer comprised of InGaN with molar fraction of indium ofbetween 3% and 6% and thickness from 45 to 80 nm;

a multiple quantum well active region layers comprised of five 4.5-5.5nm InGaN quantum wells separated by four 9.5 nm to 10.5 nm InGaNbarriers with an indium molar fraction of between 1.5% and 3%;

a p-side guide layer comprised of GaN with molar a thickness from 10 nmto 20 nm;

an electron blocking layer comprised of AlGaN with molar fraction ofaluminum of between 6% and 22% and thickness from 10 nm to 15 nm anddoped with Mg.

a p-GaN cladding layer with a thickness from 400 nm to 1000 nm with Mgdoping level of 2E17 cm⁻³ to 4E19 cm⁻³; and

a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mgdoping level of 5E19 cm⁻³ to 1E21 cm⁻³.

In a specific embodiment, the laser device is fabricated on a non-polaroriented surface region (m-plane). In a preferred embodiment, thenon-polar substrate has a miscut or off cut of −0.8 to −1.2 degreestowards (0001) and −0.3 to 0.3 degrees towards (11-20). In a specificembodiment, the non-polar oriented surface region has an overlyingn-GaN/p-GaN grown with H₂/N₂ subflow and H₂ carrier gas.

In a specific embodiment, the present invention provides an alternativedevice structure capable of emitting 501 nm light in a ridge laserembodiment. The device is provided with one or more of the followingelements, as also referenced in FIGS. 11 through 13:

an n-GaN cladding layer with a thickness from 100 nm to 3000 nm with Sidoping level of 5E17 to 3E18 cm⁻³;

an n-side SCH layer comprised of InGaN with molar fraction of indium ofbetween 3% and 7% and thickness from 40 to 60 nm;

a multiple quantum well active region layers comprised of seven 3.5-4.5nm InGaN quantum wells separated by eight 9.5 nm to 10.5 nm GaNbarriers;

a p-side SCH layer comprised of InGaN with molar a fraction of indium ofbetween 2% and 5% and a thickness from 15 nm to 25 nm;

an electron blocking layer comprised of AlGaN with molar fraction ofaluminum of between 8% and 22% and thickness from 10 nm to 15 nm anddoped with Mg;

a p-GaN cladding layer with a thickness from 400 nm to 1000 nm with Mgdoping level of 5E17 cm⁻³ to 1E19 cm⁻³; and

a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mgdoping level of 1E20 cm⁻³ to 1E21 cm⁻³.

In a specific embodiment, the laser device is fabricated on a non-polar(10-10) oriented surface region (m-plane). In a preferred embodiment,the non-polar substrate has a miscut or off cut of −0.8 to −1.2 degreestowards (0001) and −0.3 to 0.3 degrees towards (11-20). In a specificembodiment, the non-polar oriented surface region has an overlyingn-GaN/p-GaN grown with H₂/N₂ subflow and H₂ carrier gas. In a preferredembodiment, the laser device configured for a 500 nm laser uses wellregions and barriers fabricated using slow growth rates of between 0.3and 0.6 angstroms per second, but can be others. In a specificembodiment, the slow growth rate is believed to maintain the quality ofthe InGaN at longer wavelengths.

In a specific embodiment, the present invention includes the followingdevice structure.

An optical device comprising:

a gallium nitride substrate member having a semipolar crystallinesurface region, the substrate member having a thickness of less than 500microns, the gallium and nitride substrate member characterized by adislocation density of less than 107 cm⁻²;

a semipolar surface region having a root mean square surface roughnessof 10 nm and less over a 5 micron by 5 micron analysis area;

an offcut characterizing the surface region;

a gallium and nitrogen containing n-type cladding layer overlying thesurface region, the n-type cladding layer having a thickness from 300 nmto 6000 nm with an n-type doping level of 1E17 cm⁻³ to 3E18 cm⁻³;

an n-side separate confining heterostructure (SCH) waveguiding layeroverlying the n-type cladding layer, the n-side SCH waveguide layercomprising at least gallium, indium, and nitrogen with a molar fractionof InN of between 1% and 8% and having a thickness from 20 nm to 150 nm;

a multiple quantum well active region overlying the n-side SCH waveguidelayer, the multiple quantum well active region comprising two to five2.0 nm to 4.5 nm InGaN quantum wells separated by 3.5 nm to 20 nmgallium and nitrogen containing barrier layers;

a p-side guide layer overlying the multiple quantum well active region,the p-side guide layer comprising GaN or InGaN with a molar fraction ofInN of between 1% and 8% and having a thickness from 10 nm to 120 nm;

a p-type gallium and nitrogen containing cladding layer overlying themultiple quantum well active region, the p-type cladding layer having athickness from 300 nm to 1000 nm with a p-type doping level of 1E17 cm⁻³to 5E19 cm⁻³;

a p++ gallium and nitrogen containing contact layer overlying the p-typecladding layer, the p++ gallium and nitrogen containing contact layerhaving a thickness from 10 nm to 120 nm with a p-type doping level of1E19 cm⁻³ to 1E22 cm⁻³;

a waveguide member, the waveguide member being aligned substantially ina projection of the c-direction, the waveguide region comprising a firstend and a second end;

a first facet formed on the first end; and

a second facet formed on the second end.

Depending upon the embodiment, the present device structure can be madeaccording to the steps outlined below.

In a specific embodiment, the present invention also includes thefollowing device structure, and its variations in an optical device, andin particular a laser device. In this example, the optical deviceincludes one more of the following elements:

a gallium nitride substrate member having a semipolar crystallinesurface region, the substrate member having a thickness of less than 500microns, the gallium and nitride substrate member characterized by adislocation density of less than 10⁷ cm⁻²;

a semipolar surface region having an root mean square surface roughnessof 10 nm and less over a 5 micron by 5 micron analysis area;

an offcut characterizing the surface region;

a surface reconstruction region configured overlying the semipolarsurface region and the n-type cladding layer and at an interface withina vicinity of the semipolar surface region, the surface reconstructionregion having an oxygen bearing concentration of greater than 1E17 cm⁻³;

an n-type cladding layer comprising a first quaternary alloy, the firstquaternary alloy comprising an aluminum bearing species, an indiumbearing species, a gallium bearing species, and a nitrogen bearingspecies overlying the surface region, the n-type cladding layer having athickness from 100 nm to 5000 nm with an n-type doping level of 1E17cm⁻³ to 6E18 cm⁻³;

a first gallium and nitrogen containing epitaxial material comprising afirst portion characterized by a first indium concentration, a secondportion characterized by a second indium concentration, and a thirdportion characterized by a third indium concentration overlying then-type cladding layer;

an n-side separate confining heterostructure (SCH) waveguiding layeroverlying the n-type cladding layer, the n-side SCH waveguide layercomprised of InGaN with molar fraction of InN of between 1% and 8% andhaving a thickness from 30 nm to 150 nm;

a multiple quantum well active region overlying the n-side SCH waveguidelayer, the multiple quantum well active region comprising two to five2.0 nm to 4.5 nm InGaN quantum wells separated by 5 nm to 20 nm galliumand nitrogen containing barrier layers;

a p-side guide layer overlying the multiple quantum well active region,the p-side guide layer comprising GaN or InGaN with a molar fraction ofInN of between 1% and 5% and having a thickness from 20 nm to 100 nm;

a second gallium and nitrogen containing material overlying the p-sideguide layer;

a p-type cladding layer comprising a second quaternary alloy overlyingthe second gallium and nitrogen containing material, the p-type claddinglayer having a thickness from 300 nm to 1000 nm with a magnesium dopinglevel of 1E17 cm⁻³ to 4E19 cm⁻³;

a plurality of hydrogen species, the plurality of hydrogen speciesspatially disposed within the p-type cladding layer;

a p++ gallium and nitrogen containing contact layer overlying the p-typecladding layer, the p++ gallium and nitrogen containing contact layerhaving a thickness from 10 nm to 140 nm with a magnesium doping level of1E19 cm⁻³ to 1E22 cm⁻³; and

a waveguide member, the waveguide member being aligned substantially ina projection of the c-direction, the waveguide region comprising a firstend and a second end;

a first facet formed on the first end;

a first semipolar characteristic configured on the first facet;

a second facet formed on the second end;

a second semipolar characteristic configured on the second facet;

a first edge region formed on a first side of the waveguide member;

a first etched surface formed on the first edge region;

a second edge region formed on a second side of the waveguide member;and

a second etched surface formed on the second edge region.

In this example, the waveguide member is provided between the firstfacet and the second facet, e.g., semipolar facets having a scriberegion and cleave region. In this example, the scribe region is lessthan thirty percent of the cleave region to help facilitate a cleanbreak via a skip scribing techniques where the skip is within a vicinityof the ridge. The waveguide member has a length of greater than 300microns and is configured to emit substantially polarizedelectromagnetic radiation such that a polarization is substantiallyorthogonal to the waveguide cavity direction and the polarizedelectromagnetic radiation having a wavelength of 500 nm and greater anda spontaneous emission spectral full width at half maximum of less than50 nm in a light emitting diode mode of operation or a spectralline-width of a laser output of greater than 0.4 nm. The wavelength ispreferably 520 nm and greater. The wall plug efficiency is 5 percent andgreater. Depending upon the embodiment, the present device structure canbe made according to the steps outlined below.

In this example, the present method includes providing a gallium nitridesubstrate member having a semipolar crystalline surface region. Thesubstrate member has a thickness of less than 500 microns, which hasbeen thinned to less than 100 microns by way of a thinning process,e.g., grinding polishing. The gallium and nitride substrate member ischaracterized by a dislocation density of less than 10⁷ cm⁻². Thesemipolar surface region is characterized by an off-set of +/−3 degreesfrom a (20-21) semipolar plane toward a c-plane. As an example, thegallium nitride substrate can be made using bulk growth techniques suchas ammonothermal based growth or HVPE growth with extremely high qualityseeds to reduce the dislocation density to below 1E5 cm⁻², below 1E3cm⁻², or eventually even below 1E1 cm⁻².

In this example, the method also includes forming the surfacereconstruction region overlying the semipolar surface region. Thereconstruction region is formed by heating the substrate in the growthreactor to above 1000° C. with an ammonia (e.g., NH₃) and hydrogen(e.g., H₂) over pressure, e.g., atmospheric. The heating processflattens and removes micro-scratches and other imperfections on thesubstrate surface that lead to detrimental device performance. Themicro-scratches and other imperfections are often caused by substratepreparation, including grinding, lapping, and polishing, among others.

In this example, the present method also forms an n-type cladding layerby introducing gaseous species of at least ammonia with nitrogen orhydrogen and an n-type dopant bearing species. The n-type cladding layercomprises silicon as the n-type dopant. The method also includes formingof the first gallium and nitrogen containing epitaxial materialcomprises n-type GaN and underlies the n-type quaternary cladding. Thecladding layer includes aluminum, indium, gallium, and nitrogen in awurtzite-crystalline structure. Preferably, the quaternary claddingregion facilitates substantial lattice matching to the primary latticeconstant of the substrate to achieve an increased aluminum content and alower index cladding region. The lower index cladding layer enablesbetter confine optical confinement within the active region leading toimproved efficiency and gain within the laser device. The cladding layeris made with sufficient thickness to facilitate optical confinement,among other features.

The method includes forming the n-side separate confiningheterostructure (SCH) waveguiding layer comprises processing at adeposition rate of less than 1.5 angstroms per second and an oxygenconcentration of less than 8E17 cm⁻³. In this example, the n-side SCH isan InGaN material having a thickness and an oxygen concentration. Theoxygen concentration is preferably below a predetermined level within avicinity of the multiple quantum well regions to prevent any detrimentalinfluences therein. Further details of the multiple quantum well regionare provided below.

In this example, the method includes forming the multiple quantum wellactive region by processing at a deposition rate of less than 1angstroms per second and an oxygen concentration of less than 8E17 cm⁻³.The method also includes forming the p-side guide layer overlying themultiple quantum well active region by depositing an InGaN SCH layerwith an InN molar fraction of between 1% and 5% and a thickness rangingfrom 10 nm to 100 nm. The method forms the second gallium andnitrogen-containing material overlying the p-side guide layer by aprocess comprising a p-type GaN guide layer with a thickness rangingfrom 50 nm to 300 nm. As an example, the quantum well region can includetwo to four well regions, among others. Each of the quantum well layersis substantially similar to each other for improved device performance,or may be different.

In this example, the method includes forming an electron blocking layeroverlying the p-side guide layer, the electron blocking layer comprisingAlGaN with a molar fraction of AlN of between 6% and 22% and having athickness from 5 nm to 25 nm and doped with a p-type dopant such asmagnesium. The method includes forming the p-type cladding layercomprising a hydrogen species that has a concentration that tracksrelatively with the p-type dopant concentration. The method includesforming a p++-gallium and nitrogen containing contact layer comprising aGaN material formed with a growth rate of less than 2.5 angstroms persecond and characterized by a magnesium concentration of greater than5E19 cm⁻³. Preferably, the electron-blocking layer redirects electronsfrom the active region back into the active region for radiativerecombination.

In this example, the present method includes an etching process forforming the waveguide member. The etching process includes using a dryetch technique such as inductively coupled plasma etching or reactiveion etching to etch to a depth that does not penetrate through thequantum well region to maintain the multiple quantum well active regionsubstantially free from damage. In this example, the etching process maybe timed or maintained to stop the etching before any damage occurs tothe multiple quantum well region. The method includes forming the firstfacet on the first end and forming the second facet on the second endcomprising a scribing and breaking process.

In this example, the present method is generally performed in a MOCVDprocess. The MOCVD process preferably includes; (1) cleaning (viaremoval of quartz ware, vacuum, and other cleaning process); (2)subjecting the MOCVD chamber into a plurality of growth species; and (3)removing an impurity to a predetermined level. In this example, theimpurity may be an oxygen bearing impurity, among others. In a specificexample, the present method is performed using an atmospheric MOCVD toolconfigured to deposit epitaxial materials at atmospheric pressure, e.g.,700 Torr to 900 Ton.

While the above has been a full description of the specific embodiments,various modifications, alternative constructions and equivalents can beused. Therefore, the above description and illustrations should not betaken as limiting the scope of the present invention which is defined bythe appended claims.

1. An optical device comprising: a gallium nitride substrate memberhaving a semipolar crystalline surface region, the substrate memberhaving a thickness of less than 500 microns, the gallium and nitridesubstrate member characterized by a dislocation density of less than 10⁷cm⁻²; a semipolar surface region having a root mean square surfaceroughness of 10 nm and less over a 5 micron by 5 micron analysis area;an offcut characterizing the surface region; a gallium and nitrogencontaining n-type cladding layer overlying the surface region, then-type cladding layer having a thickness from 300 nm to 6000 nm with ann-type doping level of 1E17 cm⁻³ to 3E18 cm⁻³; an n-side separateconfining heterostructure (SCH) waveguiding layer overlying the n-typecladding layer, the n-side SCH waveguide layer comprised of at leastgallium, indium, and nitrogen with molar fraction of InN of between 1%and 8% and having a thickness from 20 nm to 150 nm; a multiple quantumwell active region overlying the n-side SCH waveguide layer, themultiple quantum well active region comprising two to five 2.0 nm to 4.5nm InGaN quantum wells separated by 3.5 nm to 20 nm gallium and nitrogencontaining barrier layers; a p-side guide layer overlying the multiplequantum well active region, the p-side guide layer comprised of GaN orInGaN with a molar fraction of InN of between 1% and 8% and having athickness from 10 nm to 120 nm; a p-type gallium and nitrogen containingcladding layer overlying the multiple quantum well active region, thep-type cladding layer having a thickness from 300 nm to 1000 nm with ap-type doping level of 1E17 cm⁻³ to 5E19 cm⁻³; a p++ gallium andnitrogen containing contact layer overlying the p-type cladding layer,the p++ gallium and nitrogen containing contact layer having a thicknessfrom 10 nm to 120 nm with a p-type doping level of 1E19 cm⁻³ to 1E22cm⁻³; a waveguide member, the waveguide member being alignedsubstantially in a projection of the c-direction, the waveguide regioncomprising a first end and a second end; a first facet formed on thefirst end; and a second facet formed on the second end.
 2. The device ofclaim 1 further comprising an electron blocking layer overlying thep-side guide layer, the electron blocking layer comprising AlGaN with amolar fraction of AlN of between 6% and 22% and having a thickness from5 nm to 25 nm and doped with magnesium
 3. An optical device comprising:a gallium nitride substrate member having a semipolar crystallinesurface region, the substrate member having a thickness of less than 450microns, the gallium and nitride substrate member characterized by adislocation density of less than 10⁷ cm⁻²; a semipolar surface regionhaving a root mean square surface roughness of 10 nm and less over a 5micron by 5 micron analysis area; an offcut characterizing the surfaceregion; an n-type cladding layer comprising at least an aluminum bearingspecies, a gallium bearing species, and a nitrogen bearing speciesoverlying the surface region, the n-type cladding layer having athickness from 100 nm to 5000 nm with an n-type doping level of 1E17cm⁻³ to 6E18 cm⁻³; a first gallium and nitrogen containing epitaxialmaterial comprising a first portion characterized by a first indiumconcentration, a second portion characterized by a second indiumconcentration, and a third portion characterized by a third indiumconcentration overlying the n-type cladding layer; an n-side separateconfining heterostructure (SCH) waveguiding layer overlying the n-typecladding layer, the n-side SCH waveguide layer comprising InGaN with amolar fraction of InN of between 1% and 8% and having a thickness from30 nm to 150 nm; a multiple quantum well active region overlying then-side SCH waveguide layer, the multiple quantum well active regioncomprising two to five 2.0 nm to 4.5 nm InGaN quantum wells separated by5.5 nm to 18 nm gallium and nitrogen containing barrier layers; a p-sideguide layer overlying the multiple quantum well active region, thep-side guide layer comprised of GaN or InGaN with a molar fraction ofInN of between 1% and 5% and having a thickness from 20 nm to 100 nm; ap-type cladding layer comprising at least an aluminum bearing species, agallium bearing species, and a nitrogen bearing species overlying thep-side guide layer, the p-type cladding layer having a thickness from250 nm to 1000 nm with a p-type doping level of 1E17 cm⁻³ to 5E19 cm⁻³;a plurality of hydrogen species, the plurality of hydrogen speciesspatially disposed within the p-type cladding layer; and a p++ galliumand nitrogen containing contact layer overlying the p-type claddinglayer, the p++ gallium and nitrogen containing contact layer having athickness from 10 nm to 100 nm with a p-type doping level of 1E19 cm⁻³to 1E22 cm⁻³. a waveguide member, the waveguide member being alignedsubstantially in a projection of the c-direction, the waveguide regioncomprising a first end and a second end; a first facet formed on thefirst end; a first semipolar characteristic configured on the firstfacet; a second facet formed on the second end; a second semipolarcharacteristic configured on the second facet; a first edge regionformed on a first side of the waveguide member; a first etched surfaceformed on the first edge region; a second edge region formed on a secondside of the waveguide member; a second etched surface formed on thesecond edge region; whereupon the waveguide member is provided betweenthe first facet and the second facet, the waveguide member having alength of greater than 300 microns and configured to emit substantiallypolarized electromagnetic radiation such that a polarization issubstantially orthogonal to the waveguide cavity direction and thepolarized electromagnetic radiation having a wavelength of 500 nm andgreater and a spontaneous emission spectral full width at half maximumof less than 50 nm in a light emitting diode mode of operation.
 4. Anoptical device comprising: a gallium nitride substrate member having asemipolar crystalline surface region, the substrate member having athickness of less than 500 microns, the gallium and nitride substratemember characterized by a dislocation density of less than 10⁷ cm⁻²; asemipolar surface region having a root mean square surface roughness of10 nm and less over a 5 micron by 5 micron analysis area; an offcutcharacterizing the surface region; an n-type cladding layer comprising afirst quaternary alloy, the first quaternary alloy comprising analuminum bearing species, an indium bearing species, a gallium bearingspecies, and a nitrogen bearing species overlying the surface region,the n-type cladding layer having a thickness from 100 nm to 5000 nm withan n-type doping level of 1E17 cm⁻³ to 6E18 cm⁻³; a surfacereconstruction region coverlying the semipolar surface region and then-type cladding layer and at an interface within a vicinity of thesemipolar surface region, the surface reconstruction region having anoxygen bearing concentration of greater than 1E17 cm⁻³; a first galliumand nitrogen containing epitaxial material comprising a first portioncharacterized by a first indium concentration, a second portioncharacterized by a second indium concentration, and a third portioncharacterized by a third indium concentration overlying the n-typecladding layer; an n-side separate confining heterostructure (SCH)waveguiding layer overlying the n-type cladding layer, the n-side SCHwaveguide layer comprised of InGaN with molar fraction of InN of between1% and 8% and having a thickness from 30 nm to 150 nm; a multiplequantum well active region overlying the n-side SCH waveguide layer, themultiple quantum well active region comprising two to five 2.0 nm to 4.5nm InGaN quantum wells separated by 5 nm to 20 nm gallium and nitrogencontaining barrier layers; a p-side guide layer overlying the multiplequantum well active region, the p-side guide layer comprising GaN orInGaN with a molar fraction of InN of between 1% and 5% and having athickness from 20 nm to 100 nm; a second gallium and nitrogen containingmaterial overlying the p-side guide layer; a p-type cladding layercomprising a second quaternary alloy overlying the second gallium andnitrogen containing material, the p-type cladding layer having athickness from 250 nm to 1000 nm and comprising a p-type doping speciesincluding magnesium at a concentration of 1E17 cm⁻³ to 4E19 cm⁻³; aplurality of hydrogen species, the plurality of hydrogen speciesspatially disposed within the p-type cladding layer made of thequaternary alloy; and a p++ gallium and nitrogen containing contactlayer overlying the p-type cladding layer, the p++ gallium and nitrogencontaining contact layer having a thickness from 10 nm to 140 nm andcomprising a p-type doping species including magnesium at aconcentration of 1E19 cm⁻³ to 1E22 cm⁻³. a waveguide member, thewaveguide member being aligned substantially in a projection of thec-direction, the waveguide region comprising a first end and a secondend; a first facet formed on the first end; a first semipolarcharacteristic configured on the first facet; a second facet formed onthe second end; a second semipolar characteristic configured on thesecond facet; a first edge region formed on a first side of thewaveguide member; a first etched surface formed on the first edgeregion; a second edge region formed on a second side of the waveguidemember; a second etched surface formed on the second edge region;whereupon the waveguide member is provided between the first facet andthe second facet, the waveguide member having a length of greater than300 microns and configured to emit substantially polarizedelectromagnetic radiation such that a polarization is substantiallyorthogonal to the waveguide cavity direction and the polarizedelectromagnetic radiation having a wavelength of 500 nm and greater anda spontaneous emission spectral full width at half maximum of less than50 nm in a light emitting diode mode of operation or a spectralline-width of a laser output of greater than 0.4 nm.
 5. A method formanufacturing an optical device, the method comprising: providing agallium nitride substrate member having a semipolar crystalline surfaceregion, the substrate member having a thickness of less than 500microns, the gallium and nitride substrate member characterized by adislocation density of less than 10⁷ cm⁻², the semipolar surface regionhaving a root mean square surface roughness of 10 nm and less over a 5micron by 5 micron analysis area, the semipolar surface region beingcharacterized by a specified off-set from a (20-21) semipolar plane;forming a surface reconstruction region overlying the semipolarcrystalline surface region, the surface reconstruction region having anoxygen bearing concentration of greater than 1E17 cm⁻³; forming ann-type cladding layer comprising a first quaternary alloy, the firstquaternary alloy comprising an aluminum bearing species, an indiumbearing species, a gallium bearing species, and a nitrogen bearingspecies overlying the surface region, the n-type cladding layer having athickness from 100 nm to 4000 nm with an n-type doping level of 1E17cm⁻³ to 6E18 cm⁻³; forming a first gallium and nitrogen containingepitaxial material comprising a first portion characterized by a firstindium concentration, a second portion characterized by a second indiumconcentration, and a third portion characterized by a third indiumconcentration overlying the n-type cladding layer; forming an n-sideseparate confining heterostructure (SCH) waveguiding layer overlying then-type cladding layer, the n-side SCH waveguide layer comprising InGaNwith a molar fraction of InN of between 1% and 8% and having a thicknessfrom 30 nm to 150 nm; forming a multiple quantum well active regionoverlying the n-side SCH waveguiding layer, the multiple quantum wellactive region comprising two to five 2.0 nm to 4.5 nm InGaN quantumwells separated by 7.5 nm to 18 nm gallium and nitrogen containingbarrier layers; forming a p-side guide layer overlying the multiplequantum well active region, the p-side guide layer comprised of GaN orInGaN with a molar fraction of InN of between 1% and 5% and having athickness from 20 nm to 100 nm; forming a second gallium and nitrogencontaining material overlying the p-side guide layer; forming a p-typecladding layer comprising a second quaternary alloy overlying the secondgallium and nitrogen containing material, the p-type cladding layerhaving a thickness from 300 nm to 1000 nm with a magnesium doping levelof 1E17 cm⁻³ to 3E19 cm⁻³; causing formation of a plurality of hydrogenspecies, the plurality of hydrogen species spatially disposed within thep-type cladding layer; and forming a p++ gallium and nitrogen containingcontact layer overlying the p-type cladding layer, the p++ gallium andnitrogen containing contact layer having a thickness from 10 nm to 100nm and a magnesium doping level of 2E19 cm⁻³ to 1E22 cm⁻³. forming awaveguide member using an etching process, the waveguide member beingaligned substantially in a projection of the c-direction, the waveguideregion comprising a first end and a second end, the waveguide memberhaving a first edge region formed on a first side of the waveguidemember, the waveguide member having a second edge region formed on asecond side of the waveguide member; maintaining the etching processfrom causing any damage to the multiple quantum well active region;forming a first facet on the first end, the first facet beingcharacterized by a first semipolar characteristic; and forming a secondfacet on the second end, the second facet being characterized by asecond semipolar characteristic; whereupon the waveguide member isprovided between the first facet and the second facet, the waveguidemember having a length of greater than 300 microns and configured toemit substantially polarized electromagnetic radiation such that apolarization is substantially orthogonal to the waveguide memberdirection and the polarized electromagnetic radiation having awavelength of 500 nm and greater and a spontaneous emission spectralfull width at half maximum of less than 50 nm in a light emitting diodemode of operation.
 6. The method of claim 5 wherein the semipolarsurface region is characterized by an off-set of +/−3 degrees from a(20-21) semipolar plane toward a c-plane.
 7. The method of claim 5wherein the forming the surface reconstruction region overlying thesemipolar surface region comprises heating the substrate member to above1000° C. with an ammonia and hydrogen over pressure.
 8. The method ofclaim 5 wherein the forming the n-type cladding layer comprisesintroducing gaseous species of at least ammonia with nitrogen orhydrogen and an n-type dopant bearing species.
 9. The method of claim 5wherein the forming the n-type cladding layer comprises using silicon asthe n-type dopant.
 10. The method of claim 5 wherein the forming of thefirst gallium and nitrogen containing epitaxial material comprisesn-type GaN and underlies the n-type quaternary cladding.
 11. The methodof claim 5 wherein the forming the n-side separate confiningheterostructure (SCH) waveguiding layer comprises processing at adeposition rate of less than 1.5 angstroms per second and an oxygenconcentration of less than 8E17 cm⁻³.
 12. The method of claim 5 whereinthe forming the multiple quantum well active region comprises processingat a deposition rate of less than 1 angstroms per second and an oxygenconcentration of less than 8E17 cm⁻³.
 13. The method of claim 5 whereinthe forming the p-side guide layer overlying the multiple quantum wellactive region comprises depositing an InGaN SCH layer with an InN molarfraction of between 1% and 5% and a thickness ranging from 10 nm to 100nm.
 14. The method of claim 5 wherein the forming the second gallium andnitrogen containing material overlying the p-side guide layer comprisesdepositing a p-type GaN guide layer with a thickness ranging from 50 nmto 300 nm.
 15. The method of claim 5 further comprising an electronblocking layer overlying the p-side guide layer, the electron blockinglayer comprising AlGaN with a molar fraction of AlN of between 6% and22% and having a thickness from 5 nm to 25 nm and doped with a p-typedopant such as magnesium.
 16. The method of claim 5 wherein the formingthe p-type cladding layer comprises a hydrogen species that has aconcentration that tracks relatively with the p-type dopantconcentration.
 17. The method of claim 5 wherein the forming ap++-gallium and nitrogen containing contact layer comprises depositing aGaN material formed with a growth rate of less than 2.5 angstroms persecond and characterized by a magnesium concentration of greater than1E20 cm⁻³.
 18. The method of claim 5 wherein the etching process forforming the waveguide member comprises using a dry etch technique toetch to a depth that does not penetrate through the quantum well regionto maintain the multiple quantum well active region substantially freefrom damage.
 19. The method of claim 5 wherein forming the first faceton the first end and forming the second facet on the second endcomprises using a scribing and breaking process.